Optical metrology for III-V compound semiconductor
IVS systems for Optical CD & Overlay measurement
The variety of the III-V compound semiconductor materials has favored the need in controlling and tracking daily the material quality, the deposit thickness and the pattern feature size on materials as challenging as GaN, GaAs, LiNbO3, InP, Saphire and SiC. Today, this materials, heavily implicated in the power usage reduction, have considerably increased in usage even within standard semiconductor facilities. Some facilities are added the III-V materials on top of the standard semiconductor materials to improve the power consumption or accelerate the exchanged through the device. These materials are therefore implicated within the final component yield and measurements either in specific cells or within the device, as in-chip measurement, are key to the return on investment calculation.
Inspectrology brand is constantly focusing its attention on providing the most flexible and the most accurate metrology for a large number of key process steps to allow the customer to concentrate on key devices performances.